J.-M. Sallese: search on Z-Library

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1

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Introduction

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 1.80 MB

english, 2018

2

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Generalization of the Charge-based Model: Accounting for Inversion Layers

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 485 KB

english, 2018

3

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Model-Driven Design-Space of Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 833 KB

english, 2018

4

Temperature considerations on Hall Effect sensors current-related sensitivity behaviour

Paun, Maria-Alexandra, Sallese, Jean-Michel, Kayal, Maher

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2013

Language:

english

File:

PDF, 893 KB

english, 2013

5

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Predicted Performances of Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 645 KB

english, 2018

6

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Modeling Asymmetric Operation of Double-Gate Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 768 KB

english, 2018

7

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Short-Channel Effects in Symmetric Junctionless Double-Gate FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 1.81 MB

english, 2018

8

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Modeling AC Operation in Symmetric Double-Gate and Nanowire JL FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 1.19 MB

english, 2018

9

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || The EPFL Charge-based Model of Junctionless Field-Effect Transistors

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 2.79 MB

english, 2018

10

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Transient Off-Current in Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 142 KB

english, 2018

11

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Modeling Junctionless FET with Interface Traps Targeting Biosensor Applications

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 404 KB

english, 2018

12

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Design-Space of Twin-Gate Junctionless Vertical Slit FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 489 KB

english, 2018

13

Hall Effect Sensors Design, Integration and Behavior Analysis

Paun, Maria-Alexandra, Sallese, Jean-Michel, Kayal, Maher

Journal:

Journal of Sensor and Actuator Networks

Year:

2013

Language:

english

File:

PDF, 584 KB

english, 2013

14

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Stefanucci, Camillo, Buccella, Pietro, Kayal, Maher, Sallese, Jean-Michel

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

15

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Preface

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 38 KB

english, 2018

16

[IEEE 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" - Rzeszów, Poland (2019.6.27-2019.6.29)] 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems" - A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jazaeri, Farzan, Beckers, Arnout, Tajalli, Armin, Sallese, Jean-Michel

Year:

2019

Language:

english

File:

PDF, 45 KB

english, 2019

17

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Revisiting the Junction FET: A Junctionless FET with an ∞ Gate Capacitance

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 477 KB

english, 2018

18

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Foreword

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 196 KB

english, 2018

19

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Carrier Mobility Extraction Methodology in JL and Inversion-Mode FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 436 KB

english, 2018

20

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Modeling Noise Behavior in Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 248 KB

english, 2018

21

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Review on Modeling Junctionless FETs

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 326 KB

english, 2018

22

Physics-based compact model for ultra-scaled FinFETs

Ashkhen Yesayan, Fabien Prégaldiny, Nicolas Chevillon, Christophe Lallement, Jean-Michel Sallese

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 922 KB

english, 2011

23

Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model

Jean-Michel Sallese, Matthias Bucher, François Krummenacher, Pierre Fazan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 144 KB

english, 2003

24

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

A.S. Roy, J.M. Sallese, C.C. Enz

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 246 KB

english, 2006

25

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

Lallement, C., Sallese, J.-M., Bucher, M., Grabinski, W., Fazan, P.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 752 KB

english, 2003

26

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Chevillon, N., Sallese, J.-M., Lallement, C., Prégaldiny, F., Madec, M., Sedlmeir, J., Aghassi, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.30 MB

english, 2012

27

Spindle speed ramp-up test: A novel experimental approach for chatter stability detection

Grossi, N., Scippa, A., Sallese, L., Sato, R., Campatelli, G.

Journal:

International Journal of Machine Tools and Manufacture

Year:

2015

Language:

english

File:

PDF, 4.57 MB

english, 2015

28

[IEEE 2015 MIXDES - 22nd International Conference "Mixed Design of Integrated Circuits & Systems" - Torun, Poland (2015.6.25-2015.6.27)] 2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES) - Modeling parasitic vertical PNP in HVCMOS

Stefanucci, Camillo, Buccella, Pietro, Kayal, Maher, Sallese, Jean Michel

Year:

2015

Language:

english

File:

PDF, 279 KB

english, 2015

29

[IEEE 2016 MIXDES - 23rd International Conference "Mixed Design of Integrated Circuits and Systems" - Lodz, Poland (2016.6.23-2016.6.25)] 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems - Active guard ring characterization for Smart Power ICs

Buccella, Pietro, Stefanucci, Camillo, Sallese, Jean-Michel, Kayal, Maher

Year:

2016

Language:

english

File:

PDF, 309 KB

english, 2016

30

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Global Charge Density at Drain in Accumulation Mode

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 59 KB

english, 2018

31

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Global Charge Density at Drain in Depletion Mode

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 59 KB

english, 2018

32

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || The EPFL Junctionless MODEL

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 367 KB

english, 2018

33

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors || Derivatives of Mobile Charge Density with Respect to V GS and V DS

Jazaeri, Farzan, Sallese, Jean-Michel

Year:

2018

Language:

english

File:

PDF, 62 KB

english, 2018

34

On the generation of chatter marks in peripheral milling: A spectral interpretation

Grossi, N., Scippa, A., Sallese, L., Montevecchi, F., Campatelli, G.

Journal:

International Journal of Machine Tools and Manufacture

Year:

2018

Language:

english

File:

PDF, 12.07 MB

english, 2018

35

Effects of Cognitive Behavioral Therapy for Reducing Anxiety in Children with High Functioning ASD: A Systematic Review and Meta-Analysis

Perihan, Celal, Burke, Mack, Bowman-Perrott, Lisa, Bicer, Ali, Gallup, Jennifer, Thompson, Julie, Sallese, Mary

Journal:

Journal of Autism and Developmental Disorders

Year:

2019

Language:

english

File:

PDF, 1012 KB

english, 2019

36

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Rassekh, Amin, Jazaeri, Farzan, Fathipour, Morteza, Sallese, Jean-Michel

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.34 MB

english, 2019

37

An old threat in a new setting: High prevalence of silicosis among jewelry workers

Nicola Murgia, Giacomo Muzi, Marco dell'Omo, Domenico Sallese, Cesario Ciccotosto, Margherita Rossi, Paola Scatolini, Alberto Zingarelli, Maria Patrizia Accattoli, Daniela Melchiorri, Giuseppe Abbritt

Journal:

American Journal of Industrial Medicine

Year:

2007

Language:

english

File:

PDF, 141 KB

english, 2007

38

Explicit modelling of the double-gate MOSFET with VHDL-AMS

Fabien Prégaldiny, François Krummenacher, Birahim Diagne, François Pêcheux, Jean-Michel Sallese, Christophe Lallement

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2006

Language:

english

File:

PDF, 268 KB

english, 2006

39

Switch and rf ferroelectric MEMS: a new concept

Jean-Michel Sallese, Pierre Fazan

Journal:

Sensors and Actuators A: Physical

Year:

2004

Language:

english

File:

PDF, 158 KB

english, 2004

40

Erratum to “Switch and RF ferroelectric MEMs: a new concept” [Sens. Actuators, A Phys. 109 (2004) 186–194]

Jean-Michel Sallese, Pierre Fazan

Journal:

Sensors and Actuators A: Physical

Year:

2004

File:

PDF, 27 KB

2004

41

Principles of space-charge based bi-stable MEMS: The junction-MEMS

Jean-Michel Sallese, Didier Bouvet

Journal:

Sensors and Actuators A: Physical

Year:

2007

Language:

english

File:

PDF, 435 KB

english, 2007

42

Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation

Jean-Michel Sallese, François Krummenacher, Pierre Fazan

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 568 KB

english, 2004

43

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism

Jean-Michel Sallese, François Krummenacher, Fabien Prégaldiny, Christophe Lallement, A. Roy, C. Enz

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

44

A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation

J.M. Sallese, A.-S. Porret

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 164 KB

english, 2000

45

Electrical modeling of a pressure sensor MOSFET

J.-M Sallese, W Grabinski, V Meyer, C Bassin, P Fazan

Journal:

Sensors and Actuators A: Physical

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

46

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Birahim Diagne, Fabien Prégaldiny, Christophe Lallement, Jean-Michel Sallese, François Krummenacher

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

47

Thermal Expansion of Compounds of Zircon Structure

Eleswarapu C. Subbarao, Dinesh K. Agrawal, Herbert A. McKinstry, Christopher W. Sallese, Rustum Roy

Journal:

Journal of the American Ceramic Society

Year:

1990

Language:

english

File:

PDF, 639 KB

english, 1990

48

The KDEL receptor: New functions for an old protein

Mirco Capitani, Michele Sallese

Journal:

Year:

2009

Language:

english

File:

PDF, 633 KB

english, 2009

49

A compact non-quasi-static extension of a charge-based MOS model

Porret, A.-S., Sallese, J.-M., Enz, C.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 201 KB

english, 2001

50

Noise modeling methodologies in the presence of mobility degradation and their equivalence

Roy, A.S., Enz, C.C., Sallese, J.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 358 KB

english, 2006

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